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RFD12N06RLESM
Typical Performance Curves
(Continued)
100
100 μ s
60
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
10
10
OPERATION IN THIS
AREA MAY BE
1ms
STARTING T J = 25 o C
1
LIMITED BY r DS(ON)
10ms
STARTING T J = 150 o C
SINGLE PULSE
T J = MAX RATED T C = 25 o C
0.1
1
1
10
100
0.01
0.1
1
10
100
V DS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
20
PULSE DURATION = 80 μ s
t AV , TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
20
V GS = 10V
15
10
DUTY CYCLE = 0.5% MAX
V DD = 15V
15
10
V GS = 5V
V GS = 4V
V GS = 3.5V
5
T J = 25 o C
5
V GS = 3V
0
T J = 175 o C
T J = -55 o C
0
T C = 25 o C
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1.0
2.0
3.0
4.0
5.0
0
1 2 3
4
V GS , GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
V DS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 8. SATURATION CHARACTERISTICS
80
70
I D = 17A
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
T C = 25 o C
2.5
2.0
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
I D = 12A
I D = 7A
60
50
1.5
1.0
V GS = 10V, I D = 18A
40
2
4 6 8
10
0.5
-80
-40
0
40
80
120
160
200
V GS , GATE TO SOURCE VOLTAGE (V)
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
?2002 Fairchild Semiconductor Corporation
T J , JUNCTION TEMPERATURE ( o C)
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
RFD12N06RLESM Rev. C0
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